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Processing technique to improve the turn-off gain of a silicon carbide gate turn-off thyristor and an article of manufacture

Patent image
CCDC ARL

A structure and method for a silicon carbide (SiC) gate turn-off (GTO) thyristor device operable to provide an increased turn-off gain comprises a cathode region, a drift region having an upper portion and a lower portion, wherein the drift region overlies the cathode region, a gate region overlying the drift region, an anode region overlying the gate, and at least one ohmic contact positioned on each of the gate region, anode region, and cathode region, wherein the upper portion of the drift region, the gate region, and the anode region have a free carrier lifetime and mobility lower than a comparable SiC GTO thyristor for providing the device with an increased turn-off gain, wherein the free carrier lifetime is approximately 10 nanoseconds. The reduced free carrier lifetime and mobility are affected by altering the growth conditions, such as temperature under which epitaxy occurs.

Inventors: 
Shah, Pankaj B.
Patent Number: 
Technical domain: 
Materials and Coatings
FIle Date: 
2002-12-06
Grant Date: 
2005-05-31
Grant time: 
907 days
Grant time percentile rank: 
16
Claim count percentile rank: 
2
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US ARMY