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Process for nickel silicide Ohmic contacts to n-SiC

Patent image
CCDC ARL

A Ni2Si-nSiC Ohmic contact is formed by pulsed laser ablation deposition (PLD) of Ni2Si source target deposited on a n-SiC substrate or SiC substrate wafer with SiC epilayer. The Ni2Si Ohmic contact on n-SiC was rapid thermal annealed at 950° C. for 30 s in a N2 ambient. The resultant Ohmic contact is characterized by excellent current-voltage (I-V) characteristics, an abrupt void free contact-SiC interface, retention of the PLD as-deposited contact layer width, smooth surface morphology, and absence of residual carbon within the contact layer or at the interface. The detrimental effects of contact delamination due to stress associated with interfacial voiding; and wire bond failure, non-uniformity of current flow and SiC polytype alteration due to extreme surface roughness; have been eliminated as has electrical instability associated with carbon inclusions at the contact-SiC interface, after prolonged high temperature and power device operation.

Inventors: 
Cole, Melanie W.; Weihs, Timothy P.
Patent Number: 
Technical domain: 
Materials and Coatings
FIle Date: 
2006-02-17
Grant Date: 
2007-11-20
Grant time: 
641 days
Grant time percentile rank: 
11
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
2
Assignee: 
US ARMY