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Interacting current spreader and junction extender to increase the voltage blocked in the off state of a high power semiconductor device

Patent image
CCDC ARL

A technique of spreading current flowing in a semiconductor device comprising an electrode, a drift region adjacent to the electrode, a junction termination extension implant region in the drift region, and a current spreader adjacent to the junction termination extension implant region and the electrode. The current spreader is adapted to reduce current densities and electrostatic fields (preferably simultaneously) in an area connecting the electrode with the drift region. Moreover, the current spreader is adapted to spread current flowing from the electrode into the drift region. The semiconductor device further comprises an ohmic metal contact connected to the electrode and an implant pocket in the drift region, wherein the implant pocket is adapted for terminating electrostatic field lines in the semiconductor device. Preferably, the current spreader comprises an ohmic metal and the electrode comprises any of an anode and a cathode.

Inventors: 
Shah, Pankaj B.
Patent Number: 
Technical domain: 
Materials and Coatings
FIle Date: 
2004-11-26
Grant Date: 
2007-12-04
Grant time: 
1,103 days
Grant time percentile rank: 
20
Claim count percentile rank: 
7
Citations percentile rank: 
2
'Cited by' percentile rank: 
5
Assignee: 
US ARMY