Maryland's Defense Patent Database

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High electron mobility transistors with Sb-based channels

Patent image
NRL

This invention pertains to an electronic device containing a semi-insulating substrate, a buffer layer of an antimony-based material disposed on said substrate, a channel layer of InAsySb1-y material disposed on said buffer layer, a barrier layer of an antimony-based disposed on said channel layer, and a cap layer of InAsySb1-y material disposed on said barrier layer, wherein the device can have frequency of on the order of 500 GHz and a reduced power dissipation.

Inventors: 
Boos, John Bradley; Bennett, Brian R.; Magno, Richard; Papanicolou, Nicholas A.; Tinkham, Brad P.
Patent Number: 
Technical domain: 
Materials and Coatings
FIle Date: 
2005-09-20
Grant Date: 
2008-06-17
Grant time: 
1,001 days
Grant time percentile rank: 
18
Claim count percentile rank: 
6
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY