Maryland's Defense Patent Database

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Technique for perfecting the active regions of wide bandgap semiconductor nitride devices

Patent image
NRL

This invention pertains to electronic/optoelectronic devices with reduced extended defects and to a method for making it. The device includes a substrate, a semiconductor active material deposited on said substrate, and electrical contacts. The semiconductor active material defines raised structures having atomically smooth surfaces. The method includes the steps of depositing a dielectric thin film mask material on a semiconductor substrate surface; patterning the mask material to form openings therein extending to the substrate surface; growing active material in the openings; removing the mask material to form the device with reduced extended defect density; and depositing electrical contacts on the device.

Inventors: 
Henry, Richard L.; Peckerar, Martin C.; Koleske, Daniel D.; Wickenden, Alma E.; Eddy Jr., Charles R.; Holm, Ronald T.; Twigg, Mark E.
Patent Number: 
Technical domain: 
Materials and Coatings
FIle Date: 
2006-08-02
Grant Date: 
2008-12-30
Grant time: 
881 days
Grant time percentile rank: 
16
Claim count percentile rank: 
5
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY