Maryland's Defense Patent Database

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InAlAsSb/InGaSb and InAlPSb/InGaSb heterojunction bipolar transistors

Patent image
NRL

This invention pertains to heterojunction bipolar transistors containing a semiconductor substrate, a buffer layer of an antimony-based material deposited on the substrate, a sub-collector layer of an antimony-based material deposited on the buffer layer, a collector layer of an antimony-based material deposited on the sub-collector layer, a base layer of an antimony-based material deposited on the collector layer, an emitter layer of an antimony-based material deposited on the base layer, and a cap layer of an antimony-based material deposited on the emitter layer.

Inventors: 
Boos, John Bradley; Bennett, Brian R.; Campbell, Paul; Magno, Richard
Patent Number: 
Technical domain: 
Materials and Coatings
FIle Date: 
2005-09-20
Grant Date: 
2009-12-22
Grant time: 
1,554 days
Grant time percentile rank: 
28
Claim count percentile rank: 
2
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY