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Systems and methods for estimating thermal resistance of field effect transistor structures

Patent image
CCDC ARL

Embodiments of systems and methods for estimating channel temperatures of a field effect transistor structure are disclosed. One method embodiment, among others, comprises receiving geometrical values corresponding to a field effect transistor (FET) structure, and associating the geometrical values of the FET structure to elliptical cylinder and prolate spheroidal coordinates to provide a closed form expression.

Inventors: 
Darwish, Ali Mohamed
Patent Number: 
Technical domain: 
IT and Software
FIle Date: 
2005-06-03
Grant Date: 
2010-02-02
Grant time: 
1,705 days
Grant time percentile rank: 
31
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US ARMY