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High performance chirped electrode design for large area optoelectronic devices

Patent image
NRL

An electro-optic device with a doped semiconductor base and a plurality of pixels on the semiconductor base. Pixels include oppositely doped semiconductor layer and a top electrode formed on the oppositely doped semiconductor layer. The top electrode has a grid pattern with at least one busbar and a plurality of fingers extending from the busbar, and spacing between the fingers decreases with distance from the bondpad along the busbar. Each pixel can also include a multiple quantum well formed on the semiconductor base. The top electrode shape produces an approximately uniform lateral resistance in the pixel. An embodiment is a large area modulator for modulating retro-reflector systems, which typically use large area surface-normal modulators with large lateral current flow. Uniform resistance to each part of the modulator decreases location dependence of frequency response. A chirped grid electrode balances semiconductor sheet resistance and metal line resistance components of the series resistance.

Inventors: 
Goetz, Peter G.; Rabinovich, William S.
Patent Number: 
Technical domain: 
Optics
FIle Date: 
2010-04-05
Grant Date: 
2010-12-14
Grant time: 
253 days
Grant time percentile rank: 
4
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY