Maryland's Defense Patent Database

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Method of mediating forward voltage drift in a SiC device

Patent image
NRL

A method of reversing Shockley stacking fault expansion includes providing a bipolar or a unipolar SiC device exhibiting forward voltage drift caused by Shockley stacking fault nucleation and expansion. The SiC device is heated to a temperature above 150° C. A current is passed via forward bias operation through the SiC device sufficient to induce at least a partial recovery of the forward bias drift.

Inventors: 
Caldwell, Joshua D.; Stahlbush, Robert E.; Hobart, Karl D.; Tadjer, Marko J.; Glembocki, Orest J.
Patent Number: 
Technical domain: 
Materials and Coatings
FIle Date: 
2009-04-30
Grant Date: 
2011-03-29
Grant time: 
698 days
Grant time percentile rank: 
12
Claim count percentile rank: 
2
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY