Method of mediating forward voltage drift in a SiC device
NRL
A method of reversing Shockley stacking fault expansion includes providing a bipolar or a unipolar SiC device exhibiting forward voltage drift caused by Shockley stacking fault nucleation and expansion. The SiC device is heated to a temperature above 150° C. A current is passed via forward bias operation through the SiC device sufficient to induce at least a partial recovery of the forward bias drift.
Inventors:
Caldwell, Joshua D.; Stahlbush, Robert E.; Hobart, Karl D.; Tadjer, Marko J.; Glembocki, Orest J.
Patent Number:
Technical domain:
Materials and Coatings
FIle Date:
2009-04-30
Grant Date:
2011-03-29
Grant time:
698 days
Grant time percentile rank:
12
Claim count percentile rank:
2
Citations percentile rank:
1
'Cited by' percentile rank:
1
Assignee:
US NAVY
