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Group III-nitride growth on silicon or silicon germanium substrates and method and devices therefor

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NRL

A structure including a Si1-xGex substrate and a distributed Bragg reflector layer disposed directly onto the substrate. The distributed Bragg reflector layer includes a repeating pattern that includes at least one aluminum nitride layer and a second layer having the general formula AlyGa1-yN. Another aspect of the present invention is various devices including this structure. Another aspect of the present invention is directed to a method of forming such a structure comprising providing a Si1-xGex substrate and depositing a distributed Bragg reflector layer directly onto the substrate. Another aspect of the present invention is directed to a photodetector or photovoltaic cell device, including a Si1-xGex substrate device, a group III-nitride device and contacts to provide a conductive path for a current generated across at least one of the Si1-xGex substrate device and the group III-nitride device upon incident light.

Inventors: 
Mastro, Michael A.; Eddy Jr., Charles R.; Akbar, Shahzad
Patent Number: 
Technical domain: 
Materials and Coatings
FIle Date: 
2006-12-04
Grant Date: 
2011-04-19
Grant time: 
1,597 days
Grant time percentile rank: 
29
Claim count percentile rank: 
10
Citations percentile rank: 
1
'Cited by' percentile rank: 
2
Assignee: 
US NAVY