Maryland's Defense Patent Database

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Growth of high quality low-loss ferrite materials on wide bandgap semiconductor substrates

Patent image
NRL

A semiconductor device including a ferrite layer, a widebandgap semiconductor material layer, and a buffer layer. The buffer layer comprises an interweaving of MgO and BaM. In addition the buffer layer allows a gradual reduction of the interfacial stress, and mediates the strain between a silicon substrate and a ferrite layer of the device. In addition, the buffer layer allows for high crystal alignment resulting in high crystal quality and thereby producing a low microwave loss semiconductor device. The buffer layer also minimizes chemical interdiffusion of atoms between the substrate and the ferrite layer.

Inventors: 
Harris, Vincent G.; Chen, Zhaohui
Patent Number: 
Technical domain: 
Electronics and Energy
FIle Date: 
2006-10-04
Grant Date: 
2011-10-04
Grant time: 
1,826 days
Grant time percentile rank: 
33
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY