Maryland's Defense Patent Database

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Gate after diamond transistor

Patent image
NRL

A gate after diamond transistor and method of making comprising the steps of depositing a first dielectric layer on a semiconductor substrate, depositing a diamond particle nucleation layer on the first dielectric layer, growing a diamond thin film layer on the first dielectric layer, defining an opening for the gate in the diamond thin film layer, patterning of the diamond thin film layer for a gate metal to first dielectric layer surface, etching the first dielectric layer, depositing and defining a gate metal, and forming a contact window opening in the diamond thin film layer and the first dielectric layer to the ohmic contact.

Inventors: 
Kub, Francis; Hobart, Karl
Patent Number: 
Technical domain: 
Materials and Coatings
FIle Date: 
2008-12-05
Grant Date: 
2011-10-18
Grant time: 
1,047 days
Grant time percentile rank: 
19
Claim count percentile rank: 
5
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY