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Magnetoelectronic devices are fabricated by joining the edge of one ferromagnetic thin film element with the top, or bottom, portion of a second ferromagnetic, or nonmagnetic, thin film element. The devices also employ a new operational geometry in which the transport of bias current is in the film plane of at least one of the thin film elements, but is substantially perpendicular to the film plane of at least one of the thin film elements. Additionally, any of the variety magnetoelectronic devices (e.g., current-in-plane spin valves, current-perpendicular-to-the-plane spin valves, magnetic tunnel junctions, and lateral spin valves can be fabricated using these features.