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Semiconductor photodetector with transparent interface charge control layer and method thereof

Patent image
CCDC ARL

A detection device comprising a photodetector comprising a first semiconductor layer through which light first enters the photodetector; the first semiconductor layer formed of a first semiconductor material crystal lattice which terminates at an interface creating a first interface charge; the first semiconductor layer being an absorption layer in which photons in a predetermined wavelength range are absorbed and create photogenerated carriers; and a second polar semiconductor layer deposited on the crystal lattice of the first semiconductor layer substantially transparent to light in the predetermined wavelength range and having a total polarization different from the first semiconductor layer so that a second interface charge is induced at the interface between the first and second semiconductor layers; the induced second interface charge reduces or substantially cancels the first interface charge so as to increase the collection of photogenerated carriers by the photodetector. ; and a methodproviding the above.

Inventors: 
Shen, Paul; Wraback, Michael; Sampath, Anand V.
Patent Number: 
Technical domain: 
Materials and Coatings
FIle Date: 
2011-05-24
Grant Date: 
2012-09-18
Grant time: 
483 days
Grant time percentile rank: 
8
Claim count percentile rank: 
6
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US ARMY