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Substrate temperature accuracy and temperature control flexibility in a molecular beam epitaxy system

Patent image
CCDC ARL

A control system and method for controlling temperatures while performing a MBE deposition process, wherein the control system comprises a MBE growth structure; a heater adapted to provide heat for the MBE deposition process on the MBE growth structure; and a control computer adapted to receive a plurality of dynamic feedback control signals derived from the MBE growth structure; switch among a plurality of control modes corresponding with the plurality of dynamic feedback control signals; and send an output power signal to the heater to control the heating for the MBE deposition process based on a combination of the plurality of control modes. In one embodiment, the plurality of dynamic feedback control signals comprises thermocouple signals and pyrometer signals.

Inventors: 
Svensson, Stefan P.
Patent Number: 
Technical domain: 
Materials and Coatings
FIle Date: 
2011-08-29
Grant Date: 
2013-02-12
Grant time: 
533 days
Grant time percentile rank: 
9
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US ARMY