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Silicon-based explosive devices and methods of manufacture

Patent image
CCDC ARL

Silicon-based explosive devices and methods of manufacture are provided. In this regard, a representative method involves: providing a doped silicon substrate; depositing undoped silicon on a first side of the substrate; and infusing an oxidizer into an area bounded at least in part by the undoped silicon; wherein the undoped silicon limits an exothermic reaction of the doped silicon to the bounded area. Another representative method involves: providing a doped silicon substrate; depositing a masking layer of low-pressure chemical vapor deposited (LPCVD) Silicon nitride to the first side of the substrate; patterning the nitride mask and etching the porous silicon, and infusing oxidizer into an area bounded by the LPCVD nitride; wherein the silicon nitride limits an exothermic reaction of the doped silicon to the bounded area.

Inventors: 
Currano, Luke J.; Polcawich, Ronald G.; Churaman, Wayne; Gelak, Mark
Patent Number: 
Technical domain: 
Materials and Coatings
FIle Date: 
2009-08-04
Grant Date: 
2013-04-23
Grant time: 
1,358 days
Grant time percentile rank: 
24
Claim count percentile rank: 
5
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US ARMY