Maryland's Defense Patent Database

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Transparent nanocrystalline diamond contacts to wide bandgap semiconductor devices

Patent image
NRL

A heterojunction between thin films of NCD and 4H—SiC was developed. Undoped and B-doped NCDs were deposited on both n− and p− SiC epilayers. I-V measurements on p+ NCD/n− SiC indicated Schottky rectifying behavior with a turn-on voltage of around 0.2 V. The current increased over eight orders of magnitude with an ideality factor of 1.17 at 30° C. Ideal energy-band diagrams suggested a possible conduction mechanism for electron transport from the SiC conduction band to either the valence band or acceptor level of the NCD film.

Inventors: 
Hobart, Karl D.; Feygelson, Tatyana I.; Tadjer, Marko J.; Caldwell, Joshua D.; Liu X, Kendrick; Kub, Francis J.; Mastro, Michael A.; Butler, James E.
Patent Number: 
Technical domain: 
Optics
FIle Date: 
2008-09-05
Grant Date: 
2013-05-21
Grant time: 
1,719 days
Grant time percentile rank: 
31
Claim count percentile rank: 
5
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY