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Electronic ohmic shunt RF MEMS switch and method of manufacture

Patent image
CCDC ARL

An electrostatic ohmic shunt radio frequency (RF) microelectromechanical system (MEMS) switch and method of manufacturing includes a co-planar waveguide (CPW) transmission line comprising a plurality of slots and a plurality of pillars, wherein a space between successive ones of the plurality of pillars is defined by one of the plurality of slots; a plurality of electrodes positioned in the slots; a conductive contact beam elevated over the CPW transmission line and the plurality of electrodes; and a plurality of conductive contact dimples positioned between the conductive contact beam and the CPW transmission line, wherein the plurality of pillars are adapted to prevent physical contact between the plurality of electrodes and the conductive contact beam.

Inventors: 
Pulskamp, Jeffrey S.; Judy, Daniel C.; Polcawich, Ronald G.
Patent Number: 
Technical domain: 
Electronics and Energy
FIle Date: 
2007-09-25
Grant Date: 
2013-06-11
Grant time: 
2,086 days
Grant time percentile rank: 
38
Claim count percentile rank: 
6
Citations percentile rank: 
2
'Cited by' percentile rank: 
1
Assignee: 
US ARMY