Preparation of epitaxial graphene surfaces for atomic layer deposition of dielectrics
NRL
Processes for preparation of an epitaxial graphene surface to make it suitable for deposition of high-κ oxide-based dielectric compounds such as Al2O3, HfO2, TaO5, or TiO2 are provided. A first process combines ex situ wet chemistry conditioning of an epitaxially grown graphene sample with an in situ pulsing sequence in the ALD reactor. A second process combines ex situ dry chemistry conditioning of the epitaxially grown graphene sample with the in situ pulsing sequence.
Inventors:
Garces, Nelson; Wheeler, Virginia D.; Gaskill, David Kurt; Eddy Jr., Charles R.; Jernigan, Glenn G.
Patent Number:
Technical domain:
Materials and Coatings
FIle Date:
2011-07-14
Grant Date:
2013-08-27
Grant time:
775 days
Grant time percentile rank:
14
Claim count percentile rank:
4
Citations percentile rank:
1
'Cited by' percentile rank:
1
Assignee:
US NAVY
