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Ultraviolet light emitting AlGaN composition and ultraviolet light emitting device containing same

Patent image
ARL

An AlGaN composition is provided comprising a group III-Nitride active region layer, for use in an active region of a UV light emitting device, wherein light-generation occurs through radiative recombination of carriers in nanometer scale size, compositionally inhomogeneous regions having band-gap energy less than the surrounding material. Further, a semiconductor UV light emitting device having an active region layer comprised of the AlGaN composition above is provided, as well as a method of producing the AlGaN composition and semiconductor UV light emitting device, involving molecular beam epitaxy.

Inventors: 
Sampath, Anand Venktesh; Collins, Charles J.; Garrett, Gregory Alan; Shen, Paul H.; Wraback, Michael
Patent Number: 
Technical domain: 
Materials and Coatings
FIle Date: 
2010-07-12
Grant Date: 
2013-10-22
Grant time: 
1,198 days
Grant time percentile rank: 
22
Claim count percentile rank: 
7
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US ARMY