Maryland's Defense Patent Database

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Method for reducing the concentration of oxygen, carbon, and silicon impurities on nitrogen-polar surfaces of gallium nitride

Patent image
NRL

A method of preparing GaN material includes subjecting a GaN substrate to at least two cycles of Ga deposition and desorption, then applying a layer of AlN to the GaN substrate, then growing GaN on the AlN layer by molecular beam epitaxy. This results in reduced concentrations of oxygen, carbon, and silicon impurities.

Inventors: 
Storm, David F.; Katzer, Douglas S.; Jernigan, Glenn G.; Binari, Steven C.
Patent Number: 
Technical domain: 
Materials and Coatings
FIle Date: 
2013-01-09
Grant Date: 
2014-03-11
Grant time: 
426 days
Grant time percentile rank: 
7
Claim count percentile rank: 
1
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY