Method for reducing the concentration of oxygen, carbon, and silicon impurities on nitrogen-polar surfaces of gallium nitride
NRL
A method of preparing GaN material includes subjecting a GaN substrate to at least two cycles of Ga deposition and desorption, then applying a layer of AlN to the GaN substrate, then growing GaN on the AlN layer by molecular beam epitaxy. This results in reduced concentrations of oxygen, carbon, and silicon impurities.
Inventors:
Storm, David F.; Katzer, Douglas S.; Jernigan, Glenn G.; Binari, Steven C.
Patent Number:
Technical domain:
Materials and Coatings
FIle Date:
2013-01-09
Grant Date:
2014-03-11
Grant time:
426 days
Grant time percentile rank:
7
Claim count percentile rank:
1
Citations percentile rank:
1
'Cited by' percentile rank:
1
Assignee:
US NAVY
