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GaN whiskers and methods of growing them from solution

Patent image
NRL

Millimeter-scale GaN single crystals in filamentary form, also known as GaN whiskers, grown from solution and a process for preparing the same at moderate temperatures and near atmospheric pressures are provided. GaN whiskers can be grown from a GaN source in a reaction vessel subjected to a temperature gradient at nitrogen pressure. The GaN source can be formed in situ as part of an exchange reaction or can be preexisting GaN material. The GaN source is dissolved in a solvent and precipitates out of the solution as millimeter-scale single crystal filaments as a result of the applied temperature gradient.

Inventors: 
Feigelson, Boris N.; Hite, Jennifer K.; Kub, Francis J.; Eddy Jr., Charles R.
Patent Number: 
Technical domain: 
Materials and Coatings
FIle Date: 
2010-11-23
Grant Date: 
2014-03-25
Grant time: 
1,218 days
Grant time percentile rank: 
22
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY