Maryland's Defense Patent Database

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Etching agent for type II InAs/GaInSb superlattice epitaxial materials

Patent image
NRL

This disclosure involves a formula, mixing procedure, etching technique and application of an etchant for revealing defects in T2SL's grown lattice matched to (100) GaSb. The etching agent comprises a (2.5:4.5:16.5:280) solution by volume or (1%:2%:9%:88%) by weight, of HF:H2O2:H2SO4:H2O. The etchant is made by mixing (49%) hydrofluoric aqueous solution with (30%) water-based peroxide, followed by sulfuric acid, and diluted with de-ionized H2O (DI-water).

Inventors: 
Aifer, Edward H.; Maximenko, Sergey I.
Patent Number: 
Technical domain: 
Materials and Coatings
FIle Date: 
2012-11-06
Grant Date: 
2014-04-01
Grant time: 
511 days
Grant time percentile rank: 
9
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY