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Photodetectors using resonance and method of making

Patent image
ARL

An infrared photodetector comprising: a thin contact layer substantially transparent to infrared light; an absorption layer positioned such that light admitted through the substantially transparent thin contact area passes through the absorption layer; the absorption layer being configured to utilize resonance to increase absorption efficiency; at least one reflective side wall adjacent to the absorption layer being substantially non-parallel to the incident light operating to reflect light into the absorption layer for absorption of infrared radiation; and a top contact layer positioned adjacent to the active layer. A method of designing a photodetector comprising selecting a type of material based upon the wavelength range to be detected; determining a configuration geometry; calculating the electromagnetic field distributions using a computer simulated design of the configuration geometry, and determining a quantum efficiency spectrum at the desired wavelength or wavelength range; whereby the effectiveness of the photodetector is simulated prior to fabrication.

Inventors: 
Choi, Kwong-kit
Patent Number: 
Technical domain: 
Materials and Coatings
FIle Date: 
2011-09-22
Grant Date: 
2014-04-22
Grant time: 
943 days
Grant time percentile rank: 
17
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US ARMY