Maryland's Defense Patent Database

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Silicon carbide rectifier

Patent image
NRL

Silicon carbide PiN diodes are presented with reduced temperature coefficient crossover points by limited p type contact area to limit hole injection in the n type drift layer in order to provide a lower current at which the diode shifts from negative temperature coefficient to a positive temperature coefficient of forward voltage for mitigating thermal runaway.

Inventors: 
Hobart, Karl D.; Kub, Francis J.; Ancona, Mario; Imhoff, Eugene A.
Patent Number: 
Technical domain: 
Materials and Coatings
FIle Date: 
2012-09-06
Grant Date: 
2014-05-13
Grant time: 
614 days
Grant time percentile rank: 
11
Claim count percentile rank: 
8
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY