Maryland's Defense Patent Database

The defense community in Maryland is an R&D powerhouse.

Use this database to see the innovative patents that are poised for commercialization.

Method of optimizing a GA—nitride device material structure for a frequency multiplication device

Patent image
CCDC ARL

A preferred method of optimizing a Ga-nitride device material structure for a frequency multiplication device comprises: determining the amplitude and frequency of the input signal being multiplied in frequency;providing a Ga-nitride region on a substrate;determining the Al percentage composition and impurity doping in an AlGaN region positioned on the Ga-nitride region based upon the power level and waveform of the input signal and the desired frequency range in order to optimize power input/output efficiency; andselecting an orientation of N-face polar GaN or Ga-face polar GaN material relative to the AlGaN/GaN interface so as to orient the face of the GaN so as to optimize charge at the AlGaN/GaN interface. A preferred embodiment comprises an anti-serial Schottky varactor comprising: two Schottky diodes in anti-serial connection; each comprising at least one GaN layer designed based upon doping and thickness to improve the conversion efficiency.

Inventors: 
Shah, Pankaj B.; Hung, Alfred H.
Patent Number: 
Technical domain: 
Materials and Coatings
FIle Date: 
2013-02-22
Grant Date: 
2014-08-05
Grant time: 
529 days
Grant time percentile rank: 
9
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US ARMY