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Tunnel diodes incorporating strain-balanced, quantum-confined heterostructures

Patent image
NRL

A strain-balanced quantum well tunnel junction (SB-QWTJ) device. QW structures are formed from alternating quantum well and barrier layers situated between n++ and p++ layers in a tunnel junction formed on a substrate. The quantum well layers exhibit a compressive strain with respect to the substrate, while the barrier layers exhibit a tensile strain. The composition and layer thicknesses of the quantum well and barrier layers are configured so that the compressive and tensile strains in the structure are balanced.

Inventors: 
Lumb, Matthew; Yakes, Michael K.; González, María; Bailey, Christopher; Walters, Robert J.
Patent Number: 
Technical domain: 
Materials and Coatings
FIle Date: 
2014-03-06
Grant Date: 
2014-11-04
Grant time: 
243 days
Grant time percentile rank: 
4
Claim count percentile rank: 
2
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY