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Strained InGaAs quantum wells for complementary transistors

Patent image
NRL

An InGaAs n-channel quantum well heterostructure for use in a complementary transistor having a Sb-based p-channel. The heterostructure includes a buffer layer having a lattice constant intermediate that of the n- and p-channel materials and which is configured to accommodate the strain produced by a lattice-constant mismatch between the n-channel and p-channel materials.

Inventors: 
Bennett, Brian R.; Boos, John Bradley; Chick, Theresa F.; Champlain, James G.
Patent Number: 
Technical domain: 
Materials and Coatings
FIle Date: 
2014-01-16
Grant Date: 
2014-11-11
Grant time: 
299 days
Grant time percentile rank: 
5
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY