Maryland's Defense Patent Database

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Distributed heating transistor devices providing reduced self-heating

Patent image
CCDC ARL

According to various embodiments, a distributed heating transistor includes: a plurality of active regions where transistor action occurs including a heat source; and at least one inactive region where transistor action does not occur and no heat source is present, wherein adjacent active regions are separated by the at least one inactive region. The distributed heating transistor may be configured as field effect transistors (FETs), and bipolar junction transistors (BJTs). Methods for forming the distributed heating transistors are also provided.

Inventors: 
Darwish, Ali; Hung, Hingloi Alfred
Patent Number: 
Technical domain: 
Materials and Coatings
FIle Date: 
2012-09-19
Grant Date: 
2014-12-16
Grant time: 
818 days
Grant time percentile rank: 
14
Claim count percentile rank: 
6
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US ARMY