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Low-resistivity p-type GaSb quantum wells

Patent image
NRL

A semiconductor device including a heterostructure having at least one low-resistivity p-type GaSb quantum well is provided. The heterostructure includes a layer of In0.52Al0.48As on an InP substrate, where the In0.52Al0.48As is lattice matched to InP, followed by an AlAsxSb1-x buffer layer on the In0.52Al0.48As layer, an AlAsxSb1-x spacer layer on the AlAsxSb1-x buffer layer, a GaSb quantum well layer on the AlAsxSb1-x spacer layer, an AlAsxSb1-x barrier layer on the GaSb quantum well layer, an In0.2Al0.8Sb etch-stop layer on the AlAsxSb1-x barrier layer, and an InAs cap. The semiconductor device is suitable for use in low-power electronic devices such as field-effect transistors.

Inventors: 
Bennett, Brian R.; Chick, Theresa F.; Ancona, Mario G.; Boos, John Bradley
Patent Number: 
Technical domain: 
Materials and Coatings
FIle Date: 
2013-05-16
Grant Date: 
2015-04-14
Grant time: 
698 days
Grant time percentile rank: 
12
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY