Maryland's Defense Patent Database

The defense community in Maryland is an R&D powerhouse.

Use this database to see the innovative patents that are poised for commercialization.

III-nitride P-channel field effect transistor with hole carriers in the channel

Patent image
NRL

A non-inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising a nitrogen-polar III-Nitride first material, a barrier material layer, a two-dimensional hole gas in the barrier layer, and wherein the nitrogen-polar III-Nitride material comprises one or more III-Nitride epitaxial material layers grown in such a manner that when GaN is epitaxially grown the top surface of the epitaxial layer is nitrogen-polar. A method of making a P-channel III-nitride field effect transistor with hole carriers in the channel comprising selecting a face or offcut orientation of a substrate so that the nitrogen-polar (001) face is the dominant face, growing a nucleation layer, growing a GaN epitaxial layer, doping the epitaxial layer, growing a barrier layer, etching the GaN, forming contacts, performing device isolation, defining a gate opening, depositing and defining gate metal, making a contact window, depositing and defining a thick metal.

Inventors: 
Kub, Francis J.; Anderson, Travis J.; Koehler, Andrew D.; Hobart, Karl D.
Patent Number: 
Technical domain: 
Materials and Coatings
FIle Date: 
2014-01-31
Grant Date: 
2015-04-14
Grant time: 
438 days
Grant time percentile rank: 
7
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY