A non-inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising a nitrogen-polar III-Nitride first material, a barrier material layer, a two-dimensional hole gas in the barrier layer, and wherein the nitrogen-polar III-Nitride material comprises one or more III-Nitride epitaxial material layers grown in such a manner that when GaN is epitaxially grown the top surface of the epitaxial layer is nitrogen-polar. A method of making a P-channel III-nitride field effect transistor with hole carriers in the channel comprising selecting a face or offcut orientation of a substrate so that the nitrogen-polar (001) face is the dominant face, growing a nucleation layer, growing a GaN epitaxial layer, doping the epitaxial layer, growing a barrier layer, etching the GaN, forming contacts, performing device isolation, defining a gate opening, depositing and defining gate metal, making a contact window, depositing and defining a thick metal.