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Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material

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NRL

A device with N-Channel and P-Channel III-Nitride field effect transistors comprising a non-inverted P-channel III-Nitride field effect transistor on a first nitrogen-polar nitrogen face III-Nitride material, a non-inverted N-channel III-Nitride field effect transistor, epitaxially grown, a first III-Nitride barrier layer, two-dimensional hole gas, second III-Nitride barrier layer, and a two-dimensional hole gas. A method of making complementary non-inverted P-channel and non-inverted N-channel III-Nitride FET comprising growing epitaxial layers, depositing oxide, defining opening, growing epitaxially a first nitrogen-polar III-Nitride material, buffer, back barrier, channel, spacer, barrier, and cap layer, and carrier enhancement layer, depositing oxide, growing AlN nucleation layer/polarity inversion layer, growing gallium-polar III-Nitride, including epitaxial layers, depositing dielectric, fabricating P-channel III-Nitride FET, and fabricating N-channel III-Nitride FET.

Inventors: 
Kub, Francis J.; Anderson, Travis J.; Mastro, Michael A.; Eddy Jr., Charles R.; Hite, Jennifer K.
Patent Number: 
Technical domain: 
Materials and Coatings
FIle Date: 
2014-01-31
Grant Date: 
2015-04-28
Grant time: 
452 days
Grant time percentile rank: 
8
Claim count percentile rank: 
2
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY