Maryland's Defense Patent Database

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Epitaxial graphene surface preparation for atomic layer deposition of dielectrics

Patent image
NRL

Processes for preparation of an epitaxial graphene surface to make it suitable for deposition of high-κ oxide-based dielectric compounds such as Al2O3, HfO2, TaO5, or TiO2 are provided. A first process combines ex situ wet chemistry conditioning of an epitaxially grown graphene sample with an in situ pulsing sequence in the ALD reactor. A second process combines ex situ dry chemistry conditioning of the epitaxially grown graphene sample with the in situ pulsing sequence.

Inventors: 
Garces, Nelson; Wheeler, Virginia D.; Gaskill, David Kurt; Eddy Jr., Charles R.; Jernigan, Glenn G.
Patent Number: 
Technical domain: 
Materials and Coatings
FIle Date: 
2014-06-26
Grant Date: 
2015-05-12
Grant time: 
320 days
Grant time percentile rank: 
5
Claim count percentile rank: 
2
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY