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Nanometer-scale level structures and fabrication method for digital etching of nanometer-scale level structures

Patent image
NRL

A ramped etalon cavity structure and a method of fabricating same. A bi-layer stack is deposited on a substrate. The bi-layer stack includes a plurality of bi-layers. Each bi-layer of the plurality of bi-layers includes an etch stop layer and a bulk layer. A three dimensional photoresist structure is formed by using gray-tone lithography. The three dimensional photoresist is plasma etched into the bi-layer stack, thereby generating an etched bi-layer stack. The etched bi-layer stack is chemically etched with a first chemical etchant to generate a multiple-step structure on the substrate, wherein the first chemical etchant stops at the etch stop layer.

Inventors: 
Boudreau, Andrew J.; Yetzbacher, Michael K.; Christophersen, Marc; Phlips, Bernard F.
Patent Number: 
Technical domain: 
Materials and Coatings
FIle Date: 
2014-05-05
Grant Date: 
2015-05-19
Grant time: 
379 days
Grant time percentile rank: 
6
Claim count percentile rank: 
6
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY