Maryland's Defense Patent Database

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Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material

Patent image
NRL

A device with complementary non-inverted N-channel and inverted P-channel field effect transistors comprising a layer grown epitaxially on a substrate, a barrier layer, a two-dimensional electron gas in the first III-Nitride epitaxial layer, a second III-Nitride material layer, and a two-dimensional hole gas in the second III-Nitride epitaxial layer. A device with complementary inverted N-channel and non-inverted P-channel field effect transistors comprising a nitrogen-polar III-Nitride layer grown epitaxially, a barrier material layer, a two-dimensional hole gas, and a two-dimensional electron gas in the second III-Nitride epitaxial layer. A method of making complementary inverted P-channel and non-inverted N-channel III-Nitride field effect transistors. A method of making a complementary non-inverted P-channel field effect transistor and inverted N-channel III-Nitride field effect transistor on a substrate.

Inventors: 
Kub, Francis J.; Anderson, Travis J.; Mastro, Michael A.; Eddy Jr., Charles R.; Hite, Jennifer K.
Patent Number: 
Technical domain: 
Materials and Coatings
FIle Date: 
2015-03-24
Grant Date: 
2015-08-11
Grant time: 
140 days
Grant time percentile rank: 
2
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY