The defense community in Maryland is an R&D powerhouse.
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A device with complementary non-inverted N-channel and inverted P-channel field effect transistors comprising a layer grown epitaxially on a substrate, a barrier layer, a two-dimensional electron gas in the first III-Nitride epitaxial layer, a second III-Nitride material layer, and a two-dimensional hole gas in the second III-Nitride epitaxial layer. A device with complementary inverted N-channel and non-inverted P-channel field effect transistors comprising a nitrogen-polar III-Nitride layer grown epitaxially, a barrier material layer, a two-dimensional hole gas, and a two-dimensional electron gas in the second III-Nitride epitaxial layer. A method of making complementary inverted P-channel and non-inverted N-channel III-Nitride field effect transistors. A method of making a complementary non-inverted P-channel field effect transistor and inverted N-channel III-Nitride field effect transistor on a substrate.