Maryland's Defense Patent Database

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Elimination of basal plane dislocations in post growth silicon carbide epitaxial layers by high temperature annealing while preserving surface morphology

Patent image
NRL

A method to remove basal plane dislocations in post growth silicon carbide epitaxial layers by capping post growth silicon carbide epilayers with a graphite cap and annealing the capped silicon carbon epilayers at a temperature of 1750° C. or greater with a nitrogen overpressure of 60-110 psi, wherein basal plane dislocations in the epilayers are removed while surface morphology is preserved. Also disclosed is the related silicon carbide substrate material made by this method.

Inventors: 
Mahadik, Nadeemullah A.; Stahlbush, Robert E.; Tadjer, Marko J.; Imhoff, Eugene A.; Feigelson, Boris N.
Patent Number: 
Technical domain: 
Materials and Coatings
FIle Date: 
2014-09-26
Grant Date: 
2015-09-08
Grant time: 
347 days
Grant time percentile rank: 
6
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY