Maryland's Defense Patent Database

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Nanocrystalline diamond three-dimensional films in patterned semiconductor substrates

Patent image
NRL

An array of through-silicon vias (TSVs) are formed in a silicone substrate. The vias can be tapered such that the diameter of the via at the surface of the substrate is larger than the diameter of the via at its bottom, with the diameter varying continuously along its depth. After the via is formed, it is seeded with a thin layer of nanocrystalline diamond (NCD) particles, and a NCD film is grown on the bottom and along the sidewalls of the via. The presence of the diamond-filled vias provides improved thermal management to semiconductor devices formed on the silicon substrate.

Inventors: 
Hobart, Karl D.; Tadjer, Marko J.; Feygelson, Tatyana I.; Pate, Bradford B.; Anderson, Travis J.
Patent Number: 
Technical domain: 
Materials and Coatings
FIle Date: 
2014-03-14
Grant Date: 
2015-10-13
Grant time: 
578 days
Grant time percentile rank: 
10
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY