Maryland's Defense Patent Database

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High mobility, thin film transistors using semiconductor/insulator transition-metal dichalcogenide based interfaces

Patent image
CCDC ARL

Electronic devices and methods of forming an electronic device are disclosed herein. An electronic device may include a first 2D atomic crystal layer; a second 2D atomic crystal layer disposed atop the first 2D atomic crystal layer; and an interface comprising van-der-Waals bonds between the first 2D atomic crystal layer and the second 2D atomic crystal layer. A method of forming an electronic device may include depositing a first 2D atomic crystal layer; and depositing a second 2D atomic crystal layer atop the first 2D atomic crystal layer; wherein an interface is formed between the first 2D atomic crystal layer and the second 2D atomic crystal layer via van-der-Waals bonding.

Inventors: 
Nayfeh, Osama M.
Patent Number: 
Technical domain: 
Materials and Coatings
FIle Date: 
2013-03-11
Grant Date: 
2015-11-17
Grant time: 
981 days
Grant time percentile rank: 
18
Claim count percentile rank: 
5
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US ARMY