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Inverted III-nitride P-channel field effect transistor with hole carriers in the channel

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NRL

An inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising a gallium-polar III-Nitride barrier material, a second material layer, a two-dimensional hole gas in the second layer, and wherein the gallium-polar material comprises one or more III-Nitride epitaxial material layers grown such that when GaN is epitaxially grown the top surface of the epitaxial layer is gallium-polar. A method of making an inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising selecting a face or offcut orientation of a substrate so that the gallium-polar (0001) face is the dominant face, growing a nucleation layer, growing a gallium-polar epitaxial layer, doping the epitaxial layer, growing a barrier layer, etching the GaN, forming contacts, performing device isolation, defining a gate opening, depositing and defining gate metal, making a contact window, depositing and defining a thick metal.

Inventors: 
Kub, Francis J.; Anderson, Travis J.; Koehler, Andrew D.; Hobart, Karl D.
Patent Number: 
Technical domain: 
Materials and Coatings
FIle Date: 
2015-02-09
Grant Date: 
2015-11-24
Grant time: 
288 days
Grant time percentile rank: 
5
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY