Maryland's Defense Patent Database

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Nonvolatile memory cells programable by phase change and method

Patent image
CCDC ARL

A nonvolatile memory comprising at least one ferromagnetic region having permittivity which changes from a first state to a second state of lower permittivity upon heating; at least one heater operatively associated with the at least one ferromagnetic region which selectively provides heat to the ferromagnetic region to change its permittivity; and a plurality of connectors operatively connected to the at least one heater and adapted to be connected to a current source that provides a current which causes the heater to change the at least one ferromagnetic region from a first state to a second state. Optionally, the memory is arranged as an array of memory cells. Optionally, each cell has a magnetic field sensor operatively associated therewith. Optionally, the nonvolatile memory is radiation hard. Also, a method of recording data by heating at least one ferromagnetic region to change its permittivity.

Inventors: 
Edelstein, Alan S.
Patent Number: 
Technical domain: 
IT and Software
FIle Date: 
2014-08-27
Grant Date: 
2016-01-26
Grant time: 
517 days
Grant time percentile rank: 
9
Claim count percentile rank: 
6
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US ARMY