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Inverted P-channel III-nitride field effect tansistor with Hole Carriers in the channel

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NRL

An inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising a gallium-polar III-Nitride grown epitaxially on a substrate, a barrier, a two-dimensional hole gas in the barrier layer material at the heterointerface of the first material, and wherein the gallium-polar III-Nitride material comprises III-Nitride epitaxial material layers grown in such a manner that when GaN is epitaxially grown the top surface of the epitaxial layer is gallium-polar. A method of making a P-channel III-nitride field effect transistor with hole carriers in the channel comprising selecting a face of a substrate so that the gallium-polar (0001) face is the dominant face for growth of III-Nitride epitaxial layer growth material, growing a GaN epitaxial layer, doping, growing a barrier, etching, forming a contact, performing device isolation, defining a gate opening, defining gate metal, making a contact window, and depositing and defining a thick metal.

Inventors: 
Kub, Francis J.; Anderson, Travis J.; Koehler, Andrew D.; Hobart, Karl D.
Patent Number: 
Technical domain: 
Materials and Coatings
FIle Date: 
2014-04-29
Grant Date: 
2016-03-01
Grant time: 
672 days
Grant time percentile rank: 
12
Claim count percentile rank: 
5
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY