Maryland's Defense Patent Database

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Hybrid domain wall-hall cross device

Patent image
NRL

A hybrid domain wall Hall cross device consists of a semiconductor Hall cross having a top surface and a pair of arms intersecting at a center region, and a ferromagnetic wire fabricated on the top surface, electrically isolated from the Hall cross, and having a constriction proximate to the center of the Hall cross. The device provides a magnetoelectronic MRAM storage cell with improved performance characteristics. Binary storage is associated with a trapped domain wall having one of two stable orientations. The bit state can be written using current driven domain wall motion. This is a STT process in which the write current is applied to a thin film, low impedance wire. Heating is minimized and no wear-out mechanism is known to exist.

Inventors: 
Johnson, Mark B.; Malec, Christopher
Patent Number: 
Technical domain: 
Materials and Coatings
FIle Date: 
2014-11-10
Grant Date: 
2016-03-01
Grant time: 
477 days
Grant time percentile rank: 
8
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY