Maryland's Defense Patent Database

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Transistor with diamond gate

Patent image
NRL

A field effect transistor having a diamond gate electrode and a process for forming the same. In some embodiments, the device is an AlGaN/GaN high-electron-mobility transistor (HEMT). The diamond gate electrode is formed so that it directly contacts the barrier layer. In some embodiments, the diamond gate electrode is formed from boron-doped nanocrystalline diamond (NCD), while in other embodiments, the diamond gate electrode is formed from single crystal diamond.

Inventors: 
Koehler, Andrew D.; Anderson, Travis J.; Tadjer, Marko J.; Feygelson, Tatyana I.; Hobart, Karl D.
Patent Number: 
Technical domain: 
Materials and Coatings
FIle Date: 
2014-08-28
Grant Date: 
2016-05-03
Grant time: 
614 days
Grant time percentile rank: 
11
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY