Maryland's Defense Patent Database

The defense community in Maryland is an R&D powerhouse.

Use this database to see the innovative patents that are poised for commercialization.

Method for vertical and lateral control of III-N polarity

Patent image
NRL

Disclosed herein is a method of: depositing a patterned mask layer on an N-polar GaN epitaxial layer of a sapphire, silicon, or silicon carbide substrate; depositing an AlN inversion layer on the open areas; removing any remaining mask; and depositing a III-N epitaxial layer to simultaneously produce N-polar material and III-polar material. Also disclosed herein is: depositing an AlN inversion layer on an N-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce III-polar material. Also disclosed herein is: depositing an inversion layer on a III-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce N-polar material. Also disclosed herein is a composition having: a bulk III-N substrate; an inversion layer on portions of the substrate; and a III-N epitaxial layer on the inversion layer. The III-N epitaxial layer is of the opposite polarity of the surface of the substrate.

Inventors: 
Hite, Jennifer K.; Kub, Francis J.; Eddy Jr., Charles R.; Garces, Nelson
Patent Number: 
Technical domain: 
Materials and Coatings
FIle Date: 
2011-09-19
Grant Date: 
2016-07-19
Grant time: 
1,765 days
Grant time percentile rank: 
32
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY