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CVD nanocrystalline silicon as thermoelectric material

Patent image
NRL

A process for forming a doped nc-Si thin film thermoelectric material. A nc-Si thin film is slowly deposited on a substrate, either by hot-wire CVD (HWCVD) with a controlled H2:SiH4 ratio R=6-10 or by plasma-enhanced (PECVD) with a controlled R=80-100, followed by ion implantation of an n- or p-type dopant and a final annealing step to activate the implanted dopants and to remove amorphous regions. A doped nc-Si thin film thermoelectric material so formed has both a controllable grain size of from a few tens of nm to 3 nm and a controllable dopant distribution and thus can be configured to provide a thermoelectric material having predetermined desired thermal and/or electrical properties. A final annealing step is used to activate the dopants and remove any residual amorphous regions.

Inventors: 
Liu, Xiao; Metcalf, Thomas H.; Queen, Daniel R.; Jugdersuren, Battogtokh; Wang, Qi; Nemeth, William
Patent Number: 
Technical domain: 
Materials and Coatings
FIle Date: 
2016-02-19
Grant Date: 
2016-10-18
Grant time: 
242 days
Grant time percentile rank: 
4
Claim count percentile rank: 
2
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY