Maryland's Defense Patent Database

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Integrated composite perovskite oxide heterostructure

Patent image
CCDC ARL

An integrated heterostructure material is achieved by combining the attributes of two perovskite oxide film growth methods, RF sputtering and the metallo-organic solution deposition (MOSD) technique, in combination with employing a novel integrated material design consisting of a SrTO3 thin film layer which serves as a template to achieve a property enhanced, BST-based thin film overgrowth. In specific the integrated materials design consists of a thin RF sputtered SrTiO3 film (lower layer) which underlies a substantially thicker MOSD over-growth Mg doped BST-based film (upper layer). The inventive material design and combinational film growth fabrication method thereof enables beneficial critical material/device characteristics which include enhanced dielectric permittivity in concert with low loss; low leakage current density; high voltage breakdown strength; high tunability; controlled and optimized film microstructure; and a smooth surface morphology with minimal surface defects. The invention enables miniature highly (voltage) tunable frequency agile devices and/or charge mediated voltage controlled magnetic devices for RF/microwave communications, RADAR, and electronic warfare applications.

Inventors: 
Will-cole, Melanie
Patent Number: 
Technical domain: 
Materials and Coatings
FIle Date: 
2014-09-17
Grant Date: 
2016-11-29
Grant time: 
804 days
Grant time percentile rank: 
14
Claim count percentile rank: 
5
Citations percentile rank: 
2
'Cited by' percentile rank: 
1
Assignee: 
US ARMY