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Hydrogen-free amorphous dielectric insulating thin films with no tunneling states

Patent image
NRL

A hydrogen-free amorphous dielectric insulating film having a high material density and a low density of tunneling states is provided. The film is prepared by e-beam deposition of a dielectric material on a substrate having a high substrate temperature Tsub under high vacuum and at a low deposition rate. In an exemplary embodiment, the film is amorphous silicon having a density greater than about 2.18 g/cm3 and a hydrogen content of less than about 0.1%, prepared by e-beam deposition at a rate of about 0.1 nm/sec on a substrate having Tsub=400° C. under a vacuum pressure of 1×10−8 Torr.

Inventors: 
Liu, Xiao; Queen, Daniel R.; Hellman, Frances
Patent Number: 
Technical domain: 
Electronics and Energy
FIle Date: 
2014-11-12
Grant Date: 
2016-12-27
Grant time: 
776 days
Grant time percentile rank: 
14
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY